MUR820, mur860, mur8100 ultra f ast rec o ve r y diodes dim. a b c d e f g h j k l m n q milimeter min. max. 12.70 14.73 14.23 16.51 9.66 10.66 3.54 4.08 5.85 6.85 2.54 3.42 1.15 1.77 - 6.35 0.64 0.89 4.83 5.33 3.56 4.82 0.38 0.56 2.04 2.49 0.64 1.39 inches min. max. 0.500 0.580 0.560 0.650 0.380 0.420 0.139 0.161 2.300 0.420 0.100 0.135 0.045 0.070 - 0.250 0.025 0.035 0.190 0.210 0.140 0.190 0.015 0.022 0.080 0.115 0.025 0.055 dimensions to-220ac MUR820 mur860 mur8100 v rsm v 200 600 1000 v rrm v 200 600 1000 a=anode, c=cathode, tab=cathode c a symbol test conditions maximum ratings unit i frms i favm i frm t vj =t vjm t c =115 o c; rectangular, d=0.5 t p <10us; rep. rating, pulse width limited by t vjm 16 8 130 a t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 100 110 85 95 a i fsm t vj =45 o c t=10ms (50hz), sine t=8.3ms (60hz), sine t vj =150 o c t=10ms(50hz), sine t=8.3ms(60hz), sine 50 50 36 37 a 2 s i 2 t t vj t vjm t stg -40...+150 150 -40...+150 o c p tot t c =25 o c m d mounting torque 50 0.4...0.6 2 w nm weight g c(tab) c a www.kersemi.com
MUR820, mur860, mur8100 advantages * high reliability circuit operation * low voltage peaks for reduced protection circuits * low noise switching * low losses * operating at lower temperature or space saving by reduced cooling applications * antiparallel diode for high frequency switching devices * antisaturation diode * snubber diode * free wheeling diode in converters and motor control circuits * rectifiers in switch mode power supplies (smps) * inductive heating and melting * uninterruptible power supplies (ups) * ultrasonic cleaners and welders features * international standard package jedec to-220ac * planar passivated chips * very short recovery time * extremely low switching losses * low i rm -values * soft recovery behaviour symbol test conditions characteristic values typ. max. unit t vj =25 o c; v r =v rrm t vj =25 o c; v r =0.8 . v rrm t vj =125 o c; v r =0.8 . v rrm 20 10 1.5 ua ua ma i r i f =8a; t vj =150 o c t vj =25 o c 1.3 1.5 v v f r thjc r thck r thja 2.5 60 k/w 0.5 v r =350v; i f =8a; -di f /dt=64a/us; l<0.05uh; t vj =100 o c t rr i f =1a; -di/dt=50a/us; v r =30v; t vj =25 o c ns i rm 2.8 a 35 v to for power-loss calculations only 0.98 v r t 28.7 m t vj =t vjm 50 2.5 _ ultra f ast rec o ve r y diodes www.kersemi.com
MUR820, mur860, mur8100 fig. 1 forward current fig. 2 recovery charge versus -di f /dt. fig. 3 peak reverse current versus versus voltage drop. -di f /dt. fig. 4 dynamic parameters versus fig. 5 recovery time versus -di f /dt. fig. 6 peak forward voltage junction temperature. versus di f /dt. fig. 7 transient thermal impedance junction to case. ultra f ast rec o ve r y diodes www.kersemi.com
|
